Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots
R. Seguin, A. Schliwa, T. D. Germann, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg
Abstract
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excitonic complexes change dramatically. The results are interpreted in terms of a change of electron and hole wavefunction shape and mutual position.
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