Interlayer exchange coupling in (Ga,Mn)As based multilayers
A. D. Giddings, T. Jungwirth, B. L. Gallagher
Abstract
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
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