Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, D. Weiss
Abstract
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
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