Absence of ferromagnetism in V-implanted ZnO single crystals
Shengqiang Zhou, K. Potzger, H. Reuther, K. Kuepper, W. Skorupa, M. Helm, J. Fassbender
Abstract
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*1016 to 6*1016 cm-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.
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