Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes

Abstract

The electronic states of capped semi-infinite nanotubes are studied within the phenomenological gauge field-theory model. A single manifold for the description of both the nanotube and the cap region (considered as nearly a half of either Ih or I fullerene) is suggested. The wavefunctions and the density of states (DoS) are numerically calculated for both metallic and semiconducting nanotubes. The smoothing of van Hove singularities is found and proven analytically. The comparison with the experimental observations is discussed.