Electron mobility on a surface of dielectric media: influence of surface level atoms
P. D. Grigoriev, A. M. Dyugaev, E. V. Lebedeva
Abstract
We calculate the contribution to the electron scattering rate from the surface level atoms (SLA), proposed in [A.M. Dyugaev, P.D. Grigoriev, JETP Lett. 78, 466 (2003)]. The inclusion of these states into account was sufficient to explain the long-standing puzzles in the temperature dependence of the surface tension of both He isotopes and to reach a very good agreement between theory and experiment. We calculate the contribution from these SLA to the surface electron scattering rate and explain some features in the temperature dependence of the surface electron mobility. This contribution is essential at low temperature T<0.5 when the He vapor concentration is exponentially small. For an accurate calculation of the electron mobility one also needs to consider the influence of the clamping electric field on the surface electron wave function and the temperature dependence of the He3 chemical potential.
Create a lesson
Related papers
Parametric Glassiness in Graphene-based Electronic Lévy Glass
Caue N. da Silva, Diego B. Fonseca, Adauto J. F. de Souza et al.
Giant geometric nonlinear transport in inhomogeneously strained Bi2Se3 single crystalline slabs
Igor Veremchuk, Pavlo Makushko, Anita Guarino et al.
Controlling the Atomic Reconstruction in Twisted MoSe2/WSe2 with a Monolayer hBN Spacer
Johannes Figueiredo, Kaiyuan Chen, Aubrey Penn et al.
Pulse-by-pulse imaging of reversible, collective reshaping in laser-excited gold nanorods
Mees Dieperink, Loriane Monin, Ichiro Ohnishi et al.
Atomic Edge Resonators Flatten Phonon Bands in Biphenylene Nanoribbons
V. L. Katkov, N. M. Chtchelkatchev, V. A. Osipov
Theory of exciton-exciton interactions in crystalline systems
L. Maisel Licerán, H. T. C. Stoof