High-field Hall resistivity and magnetoresistance in electron-doped Pr2-xCexCuO4-δ
Pengcheng Li, F. F. Balakirev, R. L. Greene
Abstract
We report resistivity and Hall effect measurements in electron-doped Pr2-xCexCuO4-δ films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising non-linear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.
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