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Anisotropic Pairing on a Three-Band Fermi Surface for A3 C60

E. J. Mele, S. C. Erwin

cond-matarXiv:cond-mat/9209011

Abstract

We study a model for anisotropic singlet pairing in A3 C60, using a realistic model for the Fermi surface in a hypothesized orientationally-ordered doped crystal. Anisotropic solutions are studied by combining numerical solutions to the gap equation in the low-temperature phase with a Landau expansion near the mean field critical temperature. We focus on a class of three-dimensional nodeless d-wave solutions to the model, which exhibit a fully developed gap everywhere on the Fermi surface, but non-BCS temperature dependence of the order parameter in the condensed state, a relatively large value of the low-temperature gap, 2Δ/kT c , and non-BCS structure in the quasiparticle spectrum near the gap.

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