Orientational Order and Depinning of the Disordered Electron Solid
Min-Chul Cha, H. A. Fertig
Abstract
We study the ground state of two-dimensional classical electron solids under the influence of modulation-doped impurities by using a simulated annealing molecular dynamics method. By changing the setback distance as a parameter, we find that in the strong disorder limit the ground state configuration contains both isolated dislocations and disclinations, whereas in the weak disorder regime only dislocations are present. We show, via continuum elasticity theory, that the ground state of the lattice should be unstable against a proliferation of free disclinations above a critical dislocation density. Associated with this, the behavior of the threshold electric field as a function of the setback distance changes.
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