Ballistic Composite Fermions in Semiconductor Nanostructures
J. E. F. Frost, C. -T. Liang, D. R. Mace, M. Y. Simmons, D. A. Ritchie, M. Pepper
Abstract
We report the results of two fundamental transport measurements at a Landau level filling factor ν of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and ν~=~ 1/2. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.
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