Raman Response in Doped Antiferromagnets
P. Prelovsek, J. Jaklic
Abstract
The resonant part of the B1g electronic Raman scattering response is calculated within the t-J model on a planar lattice as a function of temperature and hole doping, using a finite-temperature diagonalization method for small systems. Results, directly applicable to experiments on cuprates, reveal on doping a very pronounced increase of the width of the two-magnon Raman peak, accompanied by a decrease of the total intensity. At the same time the peak position does not shift substantially in the underdoped regime.
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