Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors
I. G. Lang, A. V. Prokhorov, M. Cardona, V. I. Belitsky, A. Cantarero, S. T. Pavlov
Abstract
A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account.
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