Single hole dispersion relation for the real CuO2 plane
V. I. Belinicher, A. L. Chernyshev, V. A. Shubin
Abstract
Dispersion relation for the CuO2 hole is calculated basing on the generalized t-t-J model, recently derived from the three-band one. Numerical ranges for all model parameters, t/J=2.4..2.7, t/t = 0..-0.25, t/t=0.1..0.15, and three-site terms 2tN tS J/4, have been strongly justified previously. Physical reasons for their values are also discussed. Self-consistent Born approximation is used for the calculation of the hole dispersion. An excellent agreement between calculated E k and one obtained from the angle-resolved photoemission experiments is found.
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