Electron Wave Filters from Inverse Scattering Theory

Abstract

Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: {\em a)} Padé approximant reconstruction of the S-matrix; {\em b)} inverse scattering theory for Schrodinger's equation; {\em c)} a unitary transformation which takes into account the variable mass effects. The resultant continuous concentration profile can be digitized into an easily realizable rectangular-wells structure. For illustration, we give the specifications of a 2 narrow band-pass 12 layer $Al_cGa_{1-c}As$ filter with the high energy peak more than {\em twice narrower} than the other.