Anomalous magnetophotoluminescence as a result of level repulsion in arrays of quantum dots
E. V. Tsiper, P. D. Wang, J. L. Merz, A. L. Efros, S. Fafard, D. Leonard, P. M. Petroff
Abstract
Selectively excited photoluminescence (SPL) of an array of self-organized In0.5Ga0.5As quantum dots has been measured in a magnetic field up to 11T. Anomalous magnetic field sensitivity of the SPL spectra has been observed under conditions for which the regular photoluminescence spectra is insensitive to the magnetic field due to large inhomogeneous broadening. The anomalous sensitivity is interpreted in terms of the repulsion of excited levels of the dots in a random potential. A theory presented to describe this phenomena is in excellent agreement with the experimental data. The data estimated the correlation in the positions of excited levels of the dots to be 94%. The magnetic field dependence allows the determination of the reduced cyclotron effective mass in a dot. For our sample we have obtained memh/(me+mh)=0.034m0.
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