The influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach
M. Huth, F. B. Anders
Abstract
The electronic transport properties of heavy-fermion systems were calculated based on a semiphenomenological approach to the lattice non-crossing approximation in the limit of infinite local correlations augmented by crystal-field effects. Within the scope of this calculation using the linearized Boltzmann theory in the relaxation time approximation the qualitative features of the temperature-dependent resistivity, the magnetoresistivity and the thermoelectric power can be successfully reproduced; this is exemplified by a comparison with experimental results on CeCu2Si2.
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