Fractional Quantum Hall Effect Measurements at Zero g-Factor
D. R. Leadley, R. J. Nicholas, D. K. Maude, A. N. Utjuzh, J. C. Portal, J. J. Harris, C. T. Foxon
Abstract
Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the g-factor changes sign when it again increases. The behavior is similar to that seen at v=1 and shows that excitations from the 1/3 ground state can be spin-like in character. At small Zeeman energy, the excitation appears to consist of 3 spins and may be interpreted as a small composite skyrmion.
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