Novel non-local behaviour of quasi-3D Wide Quantum Wells
J. Oswald, G. Span
Abstract
We investigate the high magnetic field regime of wide quantum wells (WQW) for the case of a many valley host semiconductor. The complete system is described within a modified Landauer-Buettiker formalism and we demonstrate that a parallel contribution of two electron systems in different valleys of the band structure can lead to an edge channel related non-local behaviour even in the 3D-regime. From the obtained general result we derive also a simplified model which applies for the case of much different dissipation. It represents the most dissipative system by an Ohmic resistor network and the less dissipative system by an EC-system.
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