Damping of Growth Oscillations in Molecular Beam Epitaxy: A Renormalization Group Approach
Martin Rost, Joachim Krug
Abstract
The conserved Sine-Gordon Equation with nonconserved shot noise is used to model homoepitaxial crystal growth. With increasing coverage the renormalized pinning potential changes from strong to weak. This is interpreted as a transition from layer-by-layer to rough growth. The associated length and time scales are identified, and found to agree with recent scaling arguments. A heuristically postulated nonlinear term ∇2 (∇ h)2 is created under renormalization.
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