Quantized Conductance of One-Dimensional Doped Mott Insulator

Abstract

The possible modification of quantized conductance of one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov-Stone and Ponomarenko. At T=0 and away from half-filling, the conductance is quantized as $g=2e^2/h$ and there is no renormalization by Umklapp scattering process. At finite temperatures, however, the quantization is affected depending on the gate voltage and temperature.