Self-consistent model for ambipolar tunneling in quantum-well systems
Abstract
We present a self-consistent approach to describe ambipolar tunneling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunneling from a near-surface quantum well to surface states. The results of the model compare very well with the behavior observed in photoluminescence experiments in InGaAs/InP asymmetric double quantum wells and in near-surface AlGaAs/GaAs single quantum wells.
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