Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure
Daniel Errandonea, J. F. Sánchez-Royo, A. Segura, A. Chevy, L. Roa
Abstract
The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.
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