Comparison of two methods for describing the strain profiles in quantum dots
C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, A. Zunger
Abstract
The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain -- continuum elasticity (CE, treated as a finite difference problem) and atomistic elasticity (AE). While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g. 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C2 symmetry by the C4 symmetry in the CE method), when applied to C2-symmetric InAs pyramidal dots capped by GaAs.
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