Single-electron transistor effect in a two-terminal structure
S. V. Vyshenski
Abstract
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in structures with an extremely small central island confined between tunnel barriers like a nanometer-sized quantum dot or a macromolecule probed with a tunneling microscope), where it is impossible to provide a gate electrode for control of the tunnel current.
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