Noise Reduction and Universality in Limited Mobility Models of Nonequilibrium Growth

Abstract

We show that a multiple hit noise reduction technique involving the acceptance of only a fraction of the allowed atomistic deposition events could, by significantly suppressing the formation of high steps and deep grooves, greatly facilitate the identification of the universality class of limited mobility discrete solid-on-solid conserved nonequilibrium models of epitaxial growth. In particular, the critical growth exponents of the discrete one dimensional molecular beam epitaxy growth model are definitively determined using the noise reduction technique, and the universality class is established to be that of the nonlinear continuum fourth order conserved epitaxial growth equation.