Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET
G. R. Facer, B. E. Kane, A. S. Dzurak, R. J. Heron, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, K. W. West
Abstract
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3 E11 /cm2 exceed 4 E6 cm2/Vs. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100 micron samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 microns are observed in magnetic focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.
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