Paramagnetic structure for the soliton of the 30 partial dislocation in silicon
Gabor Csanyi, Sohrab Ismail-Beigi, T. A. Arias
Abstract
Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30 partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the dislocation core. The unique electronic structure of this defect is consistent with the electron spin resonance signature of the hitherto enigmatic thermally stable R center of plastically deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.
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