Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
G. M. Minkov, A. V. Germanenko, S. A. Negachev, O. E. Rut, Eugene V. Sukhorukov
Abstract
The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6T are presented. A specific feature of the structures is a coexistence of the 2D and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.
Create a lesson
Related papers
ConvexAD: differentiable phase retrieval with geometric regularization for high-strain, low-signal Bragg coherent diffraction imaging
Matteo Masto, Ewen Bellec, Etienne Polack et al.
Symmetry-protected isolation of the quantum metric in chiral type-II semi-Dirac semimetals
Wen-Hao Bian, Jing Wang
Torsion, valley holonomy, and Berry phases of quasiparticles encircling dislocations and defect complexes in graphene
G. Q. Garcia, A. M. de M. Carvalho, C. Furtado
Field-free transverse response in altermagnet and topological insulator heterojunctions
Bijay Kumar Sahoo, Abhiram Soori
Nonlinearity-Induced Suppression of Dissipation in Bath-Coupled Floquet Topological Insulators
Bhoomija Chaurasia, Sebabrata Mukherjee
Dissipationless valley diode effects in Kekulé graphene superlattices
W. Zeng