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The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction

X. R. Wang, S. C. Ma, X. C. Xie

cond-matarXiv:cond-mat/9812048

Abstract

We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance ΔR/R can be more than 80% at low temperatures.

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