Nonmonotonic Temperature-dependent Resistance in Low Density 2D Hole Gases
A. P. Mills,, A. P. Ramirez, L. N. Pfeiffer, K. W. West
Abstract
The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x106 cm2/Vs is metallic for 2D hole density p as low as 3.8x109 cm-2. The electronic contribution to the resistance, Rel(T), is a nonmonotonic function of T, exhibiting thermal activation, Rel(T) ~ exp-Ea/kT, for kT<<EF and a heretofore unnoted decay Rel(T) ~ 1/T for kT>EF. The form of Rel(T) is independent of density, indicating a fundamental relationship between the low and high T scattering mechanisms in the metallic state.
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