Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces
O. Bunk, J. H. Zeysing, G. Falkenberg, R. L. Johnson, M. Nielsen, M. M. Nielsen, R. Feidenhans'l
Abstract
Accurate atomic coordinates of the room-temperature (root3xroot3)R30degree and low-temperature (3x3) phases of 1/3 ML Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4-sites in the (root3xroot3)R30degree structure. In the low temperature phase one of the three Sn atoms per (3x3) unit cell is displaced outwards by 0.26 +/- 0.04 A relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.
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