Parallel magnetic field induced giant magnetoresistance in low density quasi-two dimensional layers
S. Das Sarma, E. H. Hwang
Abstract
We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density quasi-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the orbital motion arising from the finite layer thickness and the large Fermi wavelength of the quasi-two dimensional system at low carrier densities.
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