Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers
D. Ferrand, J. Cibert, C. Bourgognon, S. Tatarenko, A. Wasiela, G. Fishman, A. Bonanni, H. Sitter, S. Kolesnik, J. Jaroszynski, A. Barcz, T. Dietl
Abstract
p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.
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