High-quality continuous random networks

Abstract

The continuous random network (CRN) model is an idealized model for perfectly coordinated amorphous semiconductors. The quality of a CRN can be assessed in terms of topological and configurational properties, including coordination, bond-angle distributions and deformation energy. Using a variation on the sillium approach proposed 14 years ago by Wooten, Winer and Weaire, we present 1000-atom and 4096-atom configurations with a degree of strain significantly less than the best CRN available at the moment and, for the first time, comparable to experimental results.