Excitonic lasing in semiconductor quantum wires
L. Sirigu, D. Y. Oberli, L. Degiorgi, A. Rudra, E. Kapon
Abstract
Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.
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