Diffusivity of Ga and Al adatoms on GaAs(001)
A. Kley, M. Scheffler
Abstract
The diffusivity of Ga and Al adatoms on the (2x4) reconstructed GaAs(001) surface are evaluated using detailed ab initio total energy calculations of the potential energy surface together with transition state theory. A strong diffusion anisotropy is found, with the direction of fastest diffusion being parallel to the surface As-dimer orientation. In contrast to previous calculations we identify a short--bridge position between the two As atoms of a surface dimer as the adsorption site for Al and Ga adatoms.
Create a lesson
Related papers
Theory of Alkali Induced Reconstruction of the Cu(100) Surface
S. Quassowski, K. Hermann
A Model for the Thermal Expansion of Ag(111) and other Metal Surfaces
Shobhana Narasimhan, Matthias Scheffler
Ab initio molecular dynamics study of the desorption of D2 from Si(100)
Axel Gross, Michel Bockstedte, Matthias Scheffler
Steering and isotope effects in the dissociative adsorption of H2/Pd(100)
Axel Gross, Matthias Scheffler
Strained tetragonal states and Bain paths in metals
P. Alippi, P. M. Marcus, M. Scheffler
Reconstructions of Ir (110) and (100): an ab initio study
Alessio Filippetti, Vincenzo Fiorentini