Atom lithography using MRI-type feature placement

Abstract

We demonstrate the use of frequency-encoded light masks in neutral atom lithography. We demonstrate that multiple features can be patterned across a monotonic potential gradient. Features as narrow as 0.9 microns are fabricated on silicon substrates with a metastable argon beam. Internal state manipulation with such a mask enables continuously adjustable feature positions and feature densities not limited by the optical wavelength, unlike previous light masks.