Experimental implementation of a four-level N-type scheme for the observation of Electromagnetically Induced Transparency
V. M. Entin, I. I. Ryabtsev, A. E. BoguslavskiI, I. M. Beterov
Abstract
A nondegenerate four-level N-type scheme was experimentally implemented to observe electromagnetically induced transparency (EIT) at the 87Rb D2 line. Radiations of two independent external-cavity semiconductor lasers were used in the experiment, the current of one of them being modulated at a frequency equal to the hyperfine-splitting frequency of the excited 5P3/2 level. In this case, apart from the main EIT dip corresponding to the two-photon Raman resonance in a three-level Λ-scheme, additional dips detuned from the main dip by a frequency equal to the frequency of the HF generator were observed in the absorption spectrum. These dips were due to an increase in the medium transparency at frequencies corresponding to the three-photon Raman resonances in four-level N-type schemes. The resonance shapes are analyzed as functions of generator frequency and magnetic field.
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