Electron impact ionization loading of a surface electrode ion trap
Kenneth R. Brown, Robert J. Clark, Jaroslaw Labaziewicz, Philip Richerme, David R. Leibrandt, Isaac L. Chuang
Abstract
We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By introducing a buffer gas, we can counteract the rf heating assocated with the micromotion and benefit from the larger trap depth. After an initial loading of the trap, standard compensation techniques can be used to cancel the stray fields resulting from charged dielectric and allow for the loading of the trap at ultra-high vacuum.
Create a lesson
Related papers
Spectral Fingerprints of Gauge Theories on a Quantum Computer
Graham Van Goffrier, Debasish Banerjee, Bipasha Chakraborty et al.
Dynamics of local quantum information in random unitary circuits
Ratul Thakur, Sthitadhi Roy
Factorized Boolean representations for efficient quantum synthesis
Mehul Shah, Robert Fiszer, Marek Perkowski
Detuning- and Stark-robust Rydberg gates
Elie Bataille, Gyohei Nomura, Manuel Endres
Krylov Break Times from an Inhomogeneous Lieb--Robinson Light Cone
Shunji Matsuura, Yoji Kawamura, Joseph Salfi et al.
Stochastic transport of a Goldstone mode in a self-organized atomic crystal
Zhanhai Yu, Di Xiang, Xiaotian Zhang et al.