Magnetic-Field Selection of Magnetic Order in Altermagnets and Noncollinear AntiferromagnetsConventional field selection of magnetic order relies on the Zeeman coupling, which, however, vanishes in magnets without net magnetization, a rapidly growing class including altermagnets (AMs),…Qiu-Shi Huang, Chaoxi Cui, Yilin Han et al.·Aug 21, 2026SaveLearn
Orbital-Selective Spin Splitting in the Altermagnetic Ti2XX' MonolayersAltermagnets have attracted intensive attention recently, owing to their unique combination of zero net magnetic moment of antiferromagnets and momentum space spin-splitting of ferromagnets. Herein,…Xin Zhang, Shihao Zhang·Aug 21, 2026SaveLearn
Machine Learning Guided Discovery of Corundum High Entropy OxidesEarly thinking in the field of high entropy oxides (HEOs) emphasized their likely abundance, with combinatorial arguments hinting at a myriad of new materials. The experimental reality has proven…Abraham A. Mancilla, Oliver A. Dicks, Solveig S. Aamlid et al.·Aug 20, 2026SaveLearn
AutoMOOSE: Use Case and Logical Views of Agentic Phase-Field Simulation SoftwareAutoMOOSE is an agentic software framework that converts a natural-language request into an executed, screened, and interpreted MOOSE phase-field simulation. Here, we deploy AutoMOOSE as a agentic…Sukriti Manna, Henry Chan, Subramanian Sankaranarayanan·Aug 20, 2026SaveLearn
Interplay of nonrelativistic and relativistic spin splittings in altermagnetsDespite their compensated magnetic moments, altermagnets (AMs) exhibit nonrelativistic spin splitting (NRSS) that offers routes to spintronic functionality without relying on relativistic spin-orbit…Daegeun Jo, Peter M. Oppeneer, Mohsen Yarmohammadi·Aug 20, 2026SaveLearn
Revealing the Role of Confined Molecular H2 in the Passivation of Defective Silicon Using First-Principles SimulationsThe passivation of silicon dangling bonds by hydrogen is a crucial requirement for silicon-based optoelectronic technology, especially for solar cells. Recent experiments on intense light soaking of…Hania Azzam, Tobias Binninger, Benedikt Fischer et al.·Aug 20, 2026SaveLearn
Carrier Capture at Defects from Finite-Temperature Lattice DynamicsDefect-assisted carrier capture is commonly described within nonradiative multiphonon (NMP) theory using normal modes of the equilibrium defect structure. This description becomes inadequate when…Menglin Huang, Shanshan Wang, Shiyou Chen·Aug 20, 2026SaveLearn
An LLM agent for end-to-end computational materials discoveryThe coordination of multi-scale tasks is an effective strategy for computational materials discovery, yet the repeated application of diverse algorithms and tools renders it challenging. We report…Chen Yuntong, Huang Ju, Liu Yu et al.·Aug 20, 2026SaveLearn
Three-dimensional imaging of oxygen dopant distribution in Sr2CuO3+δ by electron ptychographyOxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electron ptychography to…Hongbin Yang, Jinkwon Kim, Desheng Ma et al.·Aug 20, 2026SaveLearn
A Unified Theoretical Framework for Photoemission and Its Inverse: Reciprocity, Spin, and Photon PolarizationWe present a unified theoretical framework for spin- and angle-resolved photoemission spectroscopy (SARPES) and its inverse process (SARIPES), treating both on an equal footing. The formulation is…Frank O. Schumann, Jürgen Henk·Aug 20, 2026SaveLearn
Quantum Dissipative ParaelectricityWhether a quantum system with a double-well effective potential undergoes spontaneous symmetry breaking depends not only on the potential landscape but also on the kinetics and the coupling with…A. Cano·Aug 20, 2026SaveLearn
Effects of the surface on double surface Fermi arcs in a realistic tight-binding model of Na3Bi (100)Na3Bi is a topological Dirac semimetal (TDSM) that can support double surface Fermi arcs (DSFAs), which are important for its material classification and their potential use in spintronic devices.…Vasilios K. Passias, Lucas K. Wagner·Aug 20, 2026SaveLearn
Anomalous behavior of native point defects in C2-ordered antiferromagnet α-MnO2α-MnO2 is an emerging material for electronic, optoelectronic, and energy applications, owing to its structural flexibility and defect-driven functionality. During synthesis of α-MnO2,…Archana Sharma, Brahmananda Chakraborty·Aug 20, 2026SaveLearn
Amorphous and Nanocrystalline Topological Semimetal YPtBi/W/CoFeB Heterostructures for BEOL-Compatible Spin-Orbit Torque DevicesSpin-orbit torque (SOT) devices require spin-source materials that combine efficient charge-to-spin conversion with back-end-of-line (BEOL) thermal compatibility. Here, we show that YPtBi/W/CoFeB…Quang Le, Brian R. York, Cherngye Hwang et al.·Aug 20, 2026SaveLearn
A low-temperature setup for lock-in technique based dynamic magnetoelectric coupling measurementsMagnetoelectric (ME) phenomena in emerging material classes, such as two-dimensional van der Waals (vdW) magnets and Single-Molecule Magnets (SMMs), hold immense promise for next-generation cryogenic…Balwant Singh Chauhan, Priyanka Sharma, Rie Y. Umetsu et al.·Aug 20, 2026SaveLearn
Tuning of Photoexcited Electron Dynamics at Monolayer h-BN/Metal Interfaces by CorrugationAtomic-scale corrugation in two-dimensional materials can modify interfacial electronic coupling, yet its influence on ultrafast carrier relaxation remains poorly established. Here, we compare image…Masahiro Shibuta, Maximilian Schaal, Marco Gruenewald et al.·Aug 20, 2026SaveLearn
Building atomistic models of heterointerfaces with optimal transportHeterogeneous interfaces underpin technologies from microelectronics to energy conversion and storage, but their configurational complexity precludes exhaustive first-principles screening of…Yuxuan Tang, Keith T. Butler·Aug 20, 2026SaveLearn
Controlling catalyst agglomeration in high-density unordered III-V nanowire growth using Au colloid solutionsIII-V semiconductor nanowires (NWs) are a promising platform for optoelectronic and photoelectrochemical applications, where device performance strongly depends on NW density and spatial arrangement.…Chris Yannic Bohlemann, Pavithira Manoharan, Helene Reichel et al.·Aug 20, 2026SaveLearn
Constitutive modelling of open-porous neo-Hookean solidsOpen-porous materials exhibit pronounced compressibility, nonlinear densification, and power-law scaling of stiffness with density. In this work, we propose a thermodynamically consistent…Ameya Rege·Aug 20, 2026SaveLearn
Valley- and Spin-Dependent Electronic and Transport Properties of Two-Dimensional Altermagnetic Titanium-Based Chalcogenide HalidesAltermagnets (AMs) combine fully compensated magnetization with momentum-dependent spin splitting, yet intrinsic altermagnetic materials exhibiting exceptional valley characteristics remain scarce.…Ruo-Yu Ning, Zhi-Hua Yan, Jin-Yang Li et al.·Aug 20, 2026SaveLearn
Mirror Chern insulators in two-dimensional altermagnetic Tc2Cl2O and Tc2Br2OThe interplay between altermagnetism and crystalline band topology provides an intriguing avenue for realizing unconventional topological phases with distinctive spin-dependent properties. Here,…Rong Wang, Ruo-Yu Ning, Zhi-Hua Yan et al.·Aug 20, 2026SaveLearn
Interplay of exchange and spin-conserving scattering processes in a ferromagnetic two-sublattice systemIn magnetic alloys or hybrid systems formed by molecular magnets coupled to a magnetic substrate, the exchange interaction leads to fast spin dynamics after excitation. We investigate the electronic…Ariyan Tavakoli, Kai Leckron, Hans Christian Schneider·Aug 20, 2026SaveLearn
Composition-Driven Phase Evolution in Sm-Doped BiFeO3 via Latent-Field Reconstruction of Atomically Resolved STEM DataFunctionalities of ferroelectric materials are governed by the spatial organization and coupling of polarization, strain, lattice rotation, and structural order accessible via atomically resolved…Newsha Javanmardi, Christopher T. Nelson, Anna N. Morozovska et al.·Aug 20, 2026SaveLearn
Enhancement-Mode Vertical β-Ga2O3 U-Trench MOSFET with MOCVD Regrown n+ Contact Layers and Nitrogen-Implanted Current Blocking LayerIn this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n+ layers is demonstrated for enhancement-mode vertical β-Ga2O3 U-trench MOSFETs.…Walid Amir, Jiawei Liu, Surajit Chakraborty et al.·Aug 19, 2026SaveLearn
Dynamic Ensembles of Phosphine-Stabilized Gold NanoclustersAtomically precise phosphine-stabilized gold nanoclusters are commonly characterized by single-crystal X-ray diffraction, yet the extent to which these static structures represent finite-temperature…Caitlin A. McCandler, Disha Sanwal, Jutta Rogal·Aug 19, 2026SaveLearn