Chemical filters for ultra-high-throughput materials screening and generation
Kinga O. Mastej, Panyalak Detrattanawichai, Hyunsoo Park, Anthony Onwuli, Masahiro Negishi, Aron Walsh
Abstract
Generative artificial intelligence is rapidly transforming materials design by enabling de novo exploration of immense chemical spaces. Yet a large proportion of AI-generated compositions remain implausible, violating established chemical principles, which limits the reliability and interpretability of generative materials design. Here, we introduce a chemical validity operator that recasts heuristic chemical rules as a configurable algorithmic prior for evaluating and guiding generative materials discovery. Built on the open-source SMACT package, a data-informed oxidation-state model exposes tunable thresholds, allowing users to interpolate continuously between permissive and conservative chemical constraints, while supporting both exploratory and conservative materials-design workflows. Benchmarking six state-of-the-art generative models for inorganic crystals shows that most reproduce stoichiometry but under-represent realistic oxidation-state combinations, and that filtering removes compositions reliant on rarely observed oxidation states while preserving low-energy compounds near the convex hull. Beyond screening, the same operator can also serve as a reinforcement-learning reward, steering a latent diffusion model towards chemically grounded compositions. By encoding chemical heuristics and observations, this work establishes a foundation for oxidation-state-aware generative models.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.