The Recurrent Structural Frameworks of Stable Inorganic Materials
Roee Asher, Nadav Moav, Lee A. Burton
Abstract
The number of possible crystal structures vastly exceeds the number realized among thermodynamically stable inorganic materials, suggesting that experimentally accessible structure space is organized around a limited set of preferred structural frameworks. Analysis of 23,160 structures on the thermodynamic convex hull identifies 6,820 distinct structural frameworks, of which 2,382 recur across multiple chemically distinct materials and are therefore classified as structural prototypes. Within a filtered dataset, metallic systems exhibit particularly strong structural recurrence, with 6,270 materials grouped into 535 frameworks and 327 prototypes, while 5,557 ionic compounds occupy 1,704 frameworks and 696 prototypes. These results demonstrate that stable inorganic materials occupy a highly compressible region of structure space and establish a recurrence-based catalog of structural prototypes that provides an empirical measure of framework prevalence, enabling the relative likelihood of structural frameworks in future materials to be estimated from their recurrence among known compounds.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.