Informatics Modeling of High Tg Polymers: Assessing the Role of Processing versus Chemistry
Qinrui Liu, Scott R. Broderick
Abstract
Despite the advances in structure-based modeling of polymer properties, accurately predicting glass transition temperature (Tg) is still challenging for polymers whose behavior is strongly influenced by intermolecular interactions and processing conditions. We previously developed a machine-learning model based on polymer topological descriptors to predict Tg. The model performed well and was based solely on the chemistry and structure of the polymer without any inclusion of processing parameters. In this work, we have extended that work by first applying that same model to a larger range of polymers and second by integrating processing parameters into the feature set. The chemistry-based model still demonstrates consistent predictive performance for most polymers, indicating that Tg is indeed primarily chemistry and structure driven and not strongly impacted by processing. However, several polymers exhibited deviations between predicted and experimental Tg values. Detailed analysis reveals that these differences are related to strong intermolecular interactions and processing-dependent factors, particularly for polymers prepared by solution casting and high temperature annealing. These results demonstrate that molecular topology provides a strong foundation for Tg prediction; however, this approach also screens out those classes of polymers for with processing conditions play an important role.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.