Optimal transition states for polaron hopping transport without supercells
Vasilii Vasilchenko, Matteo Giantomassi, Samuel Poncé, Xavier Gonze
Abstract
Polaron formation localizes charge carriers and drives a crossover from band-like to hopping transport in materials. Hopping dynamics can be obtained from DFT supercell calculations of transition states, but these suffer from polaron self-interaction, spurious electrostatics, and poor scaling with polaron size. We introduce a supercell-free framework for ab initio polaron hopping transport based on the ab initio polaron equations formalism, its variational formulation, and the string method. The approach optimizes transition states between self-trapped polaron states directly in reciprocal space and provides the polaron configurations along the path, enabling evaluation of adiabatic hopping rates and mobilities. We apply the method to LiF and rutile TiO2, revealing multi-step and anisotropic hopping mechanisms. In rutile TiO2, the computed electron-polaron mobility agrees with experiment, whereas band-like Boltzmann transport substantially overestimates the mobility. Our results establish a scalable route to first-principles polaron-hopping dynamics in materials in which charge motion is governed by self-trapping.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.