Phase-field modeling of TiO2 nanocarving via reaction with hydrogen-bearing gas
Alireza Seifi, Sheikh Akbar, Yanzhou Ji
Abstract
TiO2 nanocrystals can be fabricated by carving the TiO2 bulk polycrystals using reductive H2-bearing gases, yielding single-crystal [001] nanowire arrays. However, the origin of the strongly anisotropic nanowire morphology during nanocarving remains largely unexplored. In this study, we formulate a 2-D phase-field model to investigate the TiO2 morphology evolution during nanocarving processes. The model incorporates TiO2 reduction reaction, Ti3+ diffusion, and anisotropies in surface energy, diffusivity and reaction rate. Through systematic simulations in both single- and poly-crystals, we elucidate the roles of different anisotropy factors in nanocrystal morphologies at different carving stages, identifying the strong reaction rate anisotropy as the dominant factor for experimentally observed nanowire morphologies. We further explore the effect of grain misorientation angle, generating a nanocarving morphology map to guide grain orientation control. This study provides insights into microstructure evolution mechanisms during nanocarving and guidances for related microstructure control.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.