The origin of ferroelectricity, polarization and high resistivity in Aurivillius CaBi2B2O9 (B = Ta, Nb)
Fengzhang Tang, Shi Wei, Qi Hu, Jie Xing, Jianguo Zhu, Zhi Tan, Qiang Chen
Abstract
Aurivillius layered oxides are important candidates for high-temperature ferroelectric and piezoelectric application. In this work, we combine group theoretic analysis with first-principles calculations to systematically investigate the origin of ferroelectric phase transition, polarization, piezoelectric response, and intrinsic electrical insulation of the two-layer Aurivillius ferroelectrics CaBi2B2O9 (B = Ta, Nb). The results show that the A21am ferroelectric phase arises from the cooperative condensation of a polar mode and nonpolar oxygen octahedral rotation/tilting modes, whose the Γ5-X2+X3- trilinear coupling substantially lowers the total energy and deepens the ferroelectric potential well. The spontaneous polarization and anisotropic piezoelectric response are governed primarily by the cooperative displacements of the Bi2O2 layers and Ta/NbO6 octahedra, with Bi ions providing an indispensable contribution to both responses. More importantly, the polar distortion can be traced to the relative in-plane displacement between adjacent the Bi2O2 layer and the perovskite-like block. Because this displacement is intrinsic to the alternating Bi2O2/perovskite-block stacking topology and is independent of the number of perovskite layers, we identify interlayer sliding as a general, layer-number-independent structural mechanism for ferroelectricity in Aurivillius oxides. Our findings establish a unified microscopic picture linking structural distortions, ferroelectric polarization, piezoelectric response, and electronic insulation in CaBi2B2O9 (B = Ta, Nb), and provide theoretical guidance for designing layered ferroelectric oxides with high Curie temperatures and robust insulating behavior.
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