Interface-resolved structural properties of epitaxial Y3Fe5O12/ Gd3Fe5O12 bilayers grown on GGG(111) by pulsed laser deposition
Kshitij Singh Rathore, Abhisek Mishra, Swayang Priya Mahanta, Shubhransu Sahoo, Anupama Swain, Pushpendra Gupta, Kapil Gupta, Jose M. Caicedo-Roque, Jessica Padilla-Pantoja, Francisco J. Belarre, Belen Ballesteros, Jose Santiso, Subhankar Bedanta
Abstract
Epitaxial Y3Fe5O12 (YIG) and Gd3Fe5O12 (GdIG) thin films, along with their bilayer heterostructures, were grown on Gd3Ga5O12(GGG)(111) substrates using pulsed laser deposition. Structural properties were investigated using X-ray diffraction, reciprocal space mapping, and cross-sectional transmission electron microscopy. The results confirm high crystalline quality and coherent epitaxial growth, with RSM revealing a coexistence of strained and partially relaxed regions governed by layer sequence. TEM analysis shows sharp interfaces, columnar microstructures, and antiphase boundaries that facilitate strain relaxation. A comparative study indicates that the GGG/YIG/GdIG stacking sequence exhibits improved structural quality with reduced defect density, attributed to the superior epitaxial growth of YIG on the substrate. These findings highlight the critical role of growth sequence in controlling strain and interfacial structure in garnet heterostructures.
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