Magnetic proximity-induced non-relativistic valley polarization
Weifeng Xie, Yongqi Chen, Yiboyang Sun, Xiong Xu, Yunliang Yue, Hui Wang
Abstract
The magnetic proximity effect in van der Waals heterostructures exerts a significant impact on the properties of adjacent materials. Here, we propose van der Waals heterostructures composed of monolayers ferromagnets (FM) and altermagnets (AM), in which the magnetic proximity effect from the FM induces pronounced non-relativistic valley polarization in the AM, and this phenomenon is demonstrated to be universal. Furthermore, by tuning the magnetization of the FM and the Néel vector direction of the AM, four independent valley-polarized states can be realized in the FM/AM heterostructures, exhibiting strong magnetic-valley coupling. These findings suggest that FM/AM heterostructures hold potential application value in the field of valleytronics-based information storage.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.