Hybrid-parity sliding multiferroics
Zhenzhou Guo, Jiangtao Yu, Shibo Fang, Jin Cao, Xiaodong Zhou, Yee Sin Ang, Wenhong Wang, Zhenxiang Cheng, Xiaotian Wang
Abstract
In this work, we introduce a class of hybrid-parity sliding multiferroics in which the spontaneous ferroelectric polarization is coupled to certain nonrelativistic spin splitting components through interlayer sliding, allowing these components to be reversibly switched in an electrical way. Symmetry analysis identifies coplanar magnets as natural platforms for realizing this form of sliding multiferroicity. First-principles calculations establish bilayer VBr2 as a representative example, demonstrating the coupled reversal of the out-of-plane ferroelectric polarization and the signs of both even- and odd-parity nonrelativistic spin splitting components via an interlayer-sliding pathway. The signs of these nonrelativistic spin splitting components are locked to the sliding-switchable ferroelectric polarization and encoded in the spin-current responses, providing a signature of the coupled ferroic switching. Our findings expand the scope of sliding multiferroics and the functionality of sliding ferroelectrics for low-energy, nonvolatile logic devices.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.