Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM

Abstract

Electrical contacts between metals and two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) critically govern device performance, yet their microscopic nature remains difficult to disentangle using any single characterization technique. Here we present an integrated experimental framework that combines current-voltage (IV) characterization, laser beam induced current (LBIC) mapping, and bias-dependent Kelvin probe force microscopy (KPFM) to comprehensively resolve the contact properties of few-layer MoS2-based two-terminal devices under ambient conditions. IV measurements deliver macroscopic transport characteristics as a function of bias voltage and illumination conditions. LBIC maps the local photocurrent response with micrometer spatial resolution, revealing the position and nature of internal electric fields at MoS2-metal interfaces. KPFM, operated under an applied static bias rather than in the conventional work-function mode, provides nanoscale-resolved potential distributions that quantify the relative magnitudes and spatial locations of contact barriers. We apply this framework to three representative devices - one exhibiting ohmic-like and two exhibiting diode-like contact behavior - and demonstrate that the combined analysis can unambiguously identify whether the dominant barrier is of Schottky or tunnel type and determine the asymmetry between the two contacts. We further demonstrate that thermal annealing significantly reduces the total resistance, while contact barriers remain the dominant source of resistance. The methodology is directly transferable to other 2D semiconductor-metal systems and provides a practical yet comprehensive route toward a quantitative microscopic understanding of 2D device contacts.